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publicationNumber JP-2008525994-A
titleOfInvention Transistor having a dust electrode for tunneling
abstract A transistor-like electronic device operates like a triode vacuum tube. The two electrodes (source and drain) sandwich an intermediate layer of an organic semiconductor material in which metal fine particles are dispersed. Depending on the fineness and number of particles, they are close enough together that electrons can tunnel from one fine particle to the next, and as a result, the voltage applied to the edges of the intermediate layer will cause Current is caused to flow and the entire layer reaches the applied voltage. Changing the applied voltage causes a change in the voltage of the intermediate layer, thereby controlling the conduction between the source and drain. By reducing the size of the particles, the state in which the ratio of the opening area between the particles is maintained is large, so there is room for electrons to move around the particles in the intermediate layer and in the organic material, and a high current flows through the device. It becomes possible. [Selection figure] None
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