http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008524650-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B1-11 |
| filingDate | 2005-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008524650-A |
| titleOfInvention | Method for forming antireflection film |
| abstract | A method of forming an antireflection film on an electronic device, comprising: (A) an electronic device having a formula (i) (PhSiO (3-x) / 2 (OH) x ) m HSiO (3-x) / 2 OH) x ) n (MeSiO (3-x) / 2 (OH) x ) p (wherein Ph is a phenyl group, Me is a methyl group, x has a value of 0, 1 or 2) , M has a value of 0.05 to 0.95, n has a value of 0.05 to 0.95, p has a value of 0.05 to 0.95, and m + n + p≈1 (Ii) applying an ARC composition comprising a silsesquioxane resin and (ii) a solvent; and (B) removing the solvent and curing the silsesquioxane resin on the electronic device. A method of forming an antireflection film, including forming an antireflection film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011510133-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-6997092-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011515514-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019512027-A |
| priorityDate | 2004-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 58.