| abstract |
In one embodiment, a method of epitaxially forming a silicon-containing material on a substrate surface, wherein the substrate having a single crystal surface and a second surface (amorphous or polycrystalline) is positioned in a process chamber; and And exposing to a deposition gas to form an epitaxial layer on a single crystal surface and forming a polycrystalline layer on a second surface. The deposition gas preferably includes a silicon source and at least a second elemental source, such as a germanium source, a carbon source, or both. Thereafter, the method further comprises exposing the substrate to an etchant gas so that the polycrystalline layer is etched at a faster rate than the epitaxial layer. The substrate is sequentially and repeatedly exposed to a deposition gas and an etchant gas to form a silicon-containing material. In one embodiment, the deposition gas includes silane and the etchant gas includes chlorine and nitrogen. [Selection] Figure 1 |