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filingDate 2005-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2008-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008522426-A
titleOfInvention PLT / PZT ferroelectric structure
abstract An electrically stable PbLa 0.5 TiO 3 / PbZr 0.52 Ti 0.48 O 3 (PLT / PZT) ferroelectric structure can be fabricated using a precursor solution by a simple sol-gel process. The PLT / PZT ferroelectric structure can be extended to a PLT / PZT / PLT ferroelectric capacitor structure. From the point of view of application as a device, excellent ferroelectric properties with reliable fatigue properties are desirable for sufficient performance and long device lifetime. The present PLT / PZT / PLT ferroelectric capacitor structure has a large remanent polarization, a high saturation polarization, a low coercive force and a leakage current density, and a high resistance to fatigue, which are superior to the conventional hybrid structure. By the manufacturing method using the PLT seed layer, the manufacturing temperature of the subsequent PZT layer is lowered, and the processing process becomes a simpler procedure, so that the manufacturing cost is greatly reduced. [Selection] Figure 4
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017195249-A
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