| abstract |
The resist composition comprises (A) a hydrogen silsesquioxane resin, (B) an acid dissociable group-containing compound, (C) a photoacid generator, (D) an organic solvent, and optionally (E) an additive. Including. With this resist composition, lithographic properties suitable for a photoresist (for example, high etching resistance, transparency, resolution, sensitivity, focus tolerance, line edge roughness and adhesion) are improved. |