http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008513979-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31663 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-265 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02573 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B15-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-62 |
| filingDate | 2005-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008513979-A |
| titleOfInvention | Si-Ge semiconductor material and device growth method on a substrate |
| abstract | Ge-rich content (Ge> 50 atomic%) and the exact stoichiometric SiGe, a method of growing a SiGe material on Si (100) having a SiGe 2, SiGe 3 and SiGe 4 are provided. Compound with (H 3 Ge) x SiH 4 -x (x = 1~4) new hydrides with direct Si-Ge bonds derived from the group of, at low temperature unprecedented of about 300 to 450 ° C., Growing uniform, relayed and highly planar films with low defect density eliminates the need to use buffer layers with thick composition gradients and lift-off methods. At about 500-700 ° C., SiGe x quantum dots grow with a narrow diameter distribution, defect-free microstructure and highly homogeneous elemental content at the atomic level. The method provides precise control of morphology, composition, structure and strain through the incorporation of gas precursors into the entire Si / Ge framework film. The grown material has the morphological and microstructural features required for use in molds and buffer layers for the development of high frequency electronic and optical systems, and commercial devices based on high mobility Si and Ge channels ing. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012028765-A |
| priorityDate | 2004-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 56.