http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008506621-A
Outgoing Links
Predicate | Object |
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classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J2219-00159 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J2219-00164 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J19-2415 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J19-2405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J19-243 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-029 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-03 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-03 |
filingDate | 2005-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2008-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2008506621-A |
titleOfInvention | Method and reactor for continuous production of semiconductor grade (SEG) silicon |
abstract | PROBLEM TO BE SOLVED: To provide a method and a reactor for continuously producing semiconductor grade silicon by decomposing ultra-high purity silicon-containing gas into particulate silicon and other decomposition products in a free space reactor. Within the reactor, the gas stream of cracked gas is set to swirl. The method and reactor may further comprise means for melting the formed particulate silicon to obtain a continuous phase of elemental silicon and molding liquid silicon to form a semiconductor grade silicon solid. [Selection] Figure 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020213472-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008184365-A |
priorityDate | 2004-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.