http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008505045-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-483 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-614 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2111-2084 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-9607 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-96 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-95 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-616 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2111-00905 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B38-0022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-573 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B38-0032 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B31-36 |
| filingDate | 2005-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008505045-A |
| titleOfInvention | Method for manufacturing high-density silicon carbide |
| abstract | A method of manufacturing a densified SiC product is provided. By the developed method, near net-shaped porous silicon carbide products are manufactured and densified. A substantial number of pores in the porous near net silicon carbide product are filled with a carbon precursor, a silicon carbide precursor or a mixture thereof. The carbon precursor can be a liquid or a gas. The filled SiC preform is heated to convert the carbon or silicon carbide precursor into a porous carbon or SiC preform within the pores of the near reticulated porous silicon carbide product. The immersion / pyrolysis cycle is repeated until the desired amount of carbon and / or silicon carbide is achieved. When carbon or a silicon carbide / carbon precursor mixture is used, the pyrolytic near net silicon carbide product is contacted with silicon in an inert atmosphere. Silicon diffuses through the pyrolytic near-network silicon carbide product and reacts with the carbon contained in the pores of the porous SiC preform to form silicon carbide in the pores of the near-network silicon carbide product. Form a new phase. The manufactured silicon carbide is a near-net-shaped high-density silicon carbide. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104446656-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5981570-B2 |
| priorityDate | 2004-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.