http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008504676-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78681 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-208 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2005-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008504676-A |
| titleOfInvention | Field effect transistor fabricated by wet chemical deposition |
| abstract | The present invention provides a field effect transistor and a method of manufacturing a field effect transistor by deposition on a substrate (480). This method involves wet chemical deposition of a material that reacts to produce a semiconductive material. The deposited material includes cadmium, zinc, lead, tin, bismuth, antimony, indium, copper or mercury. Wet chemical deposition can be by chemical bath deposition or spray pyrolysis. A vacuum deposition process is not required. |
| priorityDate | 2004-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 86.