| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-482
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02661
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B1-00 |
| filingDate |
2005-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2008-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2008502580-A |
| titleOfInvention |
Low temperature epitaxial growth of silicon-containing films using UV radiation |
| abstract |
A method for preparing a clean substrate surface for batch or selective epitaxial deposition of silicon-containing and / or germanium-containing films. Further, a method of growing a silicon-containing and / or germanium-containing film, wherein both the substrate cleaning method and the film growth method are performed at a temperature below 750 ° C., typically from about 700 ° C. to about 500 ° C. . Cleaning and film growth methods employ the use of radiation whose wavelength is in the range of about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is growing. This use of radiation combined with a specific partial pressure range of reactive cleaning or film-forming component species allows substrate cleaning and epitaxial film growth at temperatures lower than those previously known in the industry. [Selection] Figure 1 |
| priorityDate |
2004-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |