| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_298577d58835857400d890c523069577 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate |
2007-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2415cea2d7f307eb18599081e2b86a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_789230f7f55f5d9e77b59733aa3cda44 |
| publicationDate |
2008-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2008311317-A |
| titleOfInvention |
Semiconductor light emitting device |
| abstract |
A semiconductor light emitting device having excellent light extraction efficiency is provided. The present invention relates to a multilayer reflective film made of an AlGaN / GaN multilayer film provided on a substrate, and a first semiconductor layer made of an n-type GaN layer provided on the multilayer reflective film. An active layer 18 made of MQW of InGaN / GaN having a two-dimensional photonic crystal structure provided on the first semiconductor layer 16 and a conductivity type opposite to that of the first semiconductor layer 16 provided on the active layer 18 The active layer 18 is a semiconductor light emitting device having a photonic band gap. The second semiconductor layer 20 is a p-type GaN layer, and a light emitting surface 25 is provided on the second semiconductor layer 20. [Selection] Figure 4 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5730326-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9349918-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9929317-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9929311-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013008556-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5803672-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10056526-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015008776-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109427932-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11309454-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9806229-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10680134-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9028070-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109427932-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105720151-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012057108-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10950751-B2 |
| priorityDate |
2007-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |