| abstract |
In an epitaxial wafer manufacturing method, carbon ions are implanted to form a carbon ion implanted layer, and a recovery heat treatment is surely performed before the step of forming a silicon epitaxial layer on the implanted surface, whereby an epitaxial layer is formed. Provided is a method for manufacturing an epitaxial wafer at low cost without forming an epitaxial defect and having a strong gettering capability. A method of manufacturing an epitaxial wafer, in which carbon ions are implanted to form a carbon implanted layer, and thereafter, heat treatment is performed in an atmosphere containing ammonia or nitrogen using a rapid heating / rapid cooling (RTA) apparatus. And producing an epitaxial layer on the heat-treated silicon wafer. [Selection] Figure 1 |