http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008288232-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2007-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10941373b6a864097266d70055b7c335 |
| publicationDate | 2008-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008288232-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | An object is to manufacture a semiconductor device with high response speed and high reliability. A substrate includes a bonding layer, an insulating film on the bonding layer, a single crystal semiconductor layer on the insulating film, a channel formation region in the single crystal semiconductor layer, and a low concentration impurity. A region, a silicide region, a non-single-crystal semiconductor film containing a rare gas element between the insulating film and the silicide region, a gate insulating film, a gate electrode, and a gate electrode on the single-crystal semiconductor layer The present invention relates to a semiconductor device having a sidewall on a side surface, and a non-single-crystal semiconductor film that suppresses diffusion of a metal element in the silicide region into the channel formation region and a manufacturing method thereof. [Selection] Figure 9 |
| priorityDate | 2007-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 79.