| abstract |
In a semiconductor device in which an integrated circuit and an antenna are integrally formed using copper plating as an antenna, adverse effects on electrical characteristics of circuit elements due to diffusion of copper are prevented, and the integrated circuit and the antenna are integrally formed. The present invention provides a device for preventing a semiconductor device from being defective due to a poor connection between an antenna and an integrated circuit. According to a semiconductor device, in a semiconductor device in which an integrated circuit and an antenna are integrally formed on the same substrate, when a copper plating layer is used as a conductor of the antenna, Since a predetermined metal nitride film is used for the ground layer 107, diffusion of copper into the circuit element can be prevented, and adverse effects on the electrical characteristics of the circuit element due to copper diffusion can be reduced. Further, by using nickel nitride as one of the metal nitrides of the base layer of the antenna, poor connection between the antenna and the integrated circuit can be reduced. [Selection] Figure 1 |