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publicationDate 2008-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008270833-A
titleOfInvention Plasma doping method and apparatus
abstract A plasma doping method and apparatus excellent in reproducibility of impurity concentration introduced into a sample surface. In a vacuum vessel 1, gas is ejected from a gas ejection hole 5 provided in a counter electrode 3 toward a substrate 7 placed on a sample electrode 6, and exhausted by a turbo molecular pump 8 serving as an exhaust device. The pressure control valve 9 keeps the inside of the vacuum vessel 1 at a predetermined pressure, and the distance between the counter electrode 3 and the sample electrode 6 is set to be equal to the area of the counter electrode 3 without plasma diffusion outward. Plasma doping is performed by making the capacity sufficiently small, generating capacitively coupled plasma between the counter electrode 3 and the sample electrode 6. A low concentration gas containing impurities such as diborane and phosphine is used as the gas. [Selection] Figure 1A
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