| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dbdfa36b677f4ef61245ca725011e221 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G3-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D171-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B1-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C20-04 |
| filingDate |
2007-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80e1a0372f4c56d2ba1327ca3bcc4a85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a2e33fe3c6578c002e98885e11f8c1b |
| publicationDate |
2008-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2008257935-A |
| titleOfInvention |
Metal thin film precursor dispersion |
| abstract |
Disclosed is a metal thin film precursor dispersion that can form a metal thin film having the same degree of conductivity as a bulk metal thin film and having few pinholes. A dispersion containing a metal thin film precursor, the compound having a surface tension of 40 mN / m or less and 5 wt% or more in the dispersion, excluding the metal thin film precursor. The metal thin film precursor dispersion liquid has a boiling point of 150 ° C. or more and 400 ° C. or less, or a burning temperature of the compound is 150 ° C. or more and 400 ° C. or less. [Selection figure] None |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013144615-A |
| priorityDate |
2007-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |