| abstract |
The present invention relates to a method for producing a compound semiconductor quantum dot, which is intended to realize a compound semiconductor quantum dot having good dot-like shape characteristics and good crystallinity capable of realizing three-dimensional electron confinement on a Si substrate. A Si 1-xy Ge x Cy (x ≧ 0, y ≧ 0) material of one group of compound semiconductor materials necessary for forming InAs quantum dots 5 on a buffer layer 2, for example, AsH 3 And supplying all raw materials, for example, AsH 3 and TMIn, to form InAs quantum dots 5. [Selection] Figure 4 |