http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008251124-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd83260a96356882b5f50dd097411a72
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-28
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-04
filingDate 2007-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8def581bc0898bab1be2f04264d26b8b
publicationDate 2008-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008251124-A
titleOfInvention Nonvolatile semiconductor memory device and operation method thereof
abstract A circuit used for reading is reduced in size, and a signal level of a reference signal is easily finely adjusted. A memory cell for storing charge in a floating gate, a bit line BLi connected to the drain side of the memory cell, a bit line / BLi connected to the source side, and a charge in the floating gate are stored. A reference bit line RBL connected to the drain side of the reference cell 22 and a reference bit line / RBL connected to the source side, which are electrically independent from the reference cell 22, the bit lines BLi, / BLi , A sense amplifier 6 and a bit line potential control circuit 7. The bit line potential control circuit 7 controls the reference bit line / RBL to a voltage level different from the voltage level of the bit line / BLi during a read operation for reading data from the memory cell 21. [Selection] Figure 3
priorityDate 2007-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID176015
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID450646340

Total number of triples: 14.