| abstract |
Capacitance equivalent thickness and leakage current characteristics can be improved through formation of a high-density amorphous high dielectric insulating film using a precursor that can be deposited by atomic layer deposition at a temperature of 400 ° C. or higher. A method for manufacturing a semiconductor device is provided. A third insulating film (150) is formed on a high dielectric insulating film (140). The third insulating film (150) is the upper oxide film of the dielectric film between the floating gate and the control gate of the NAND flash element, and the interlayer insulation between the lower electrode of the capacitor and the upper electrode of the capacitor in the capacitor manufacturing process. It is formed for use as a film, preferably an HTO oxide film. In this case, it is formed with a thickness of 10 to 50 mm using a CVD method (for example, LPCVD method). Thus, a high dielectric film (160) having an OKO structure is formed in the NAND flash element including the second insulating film (130), the high dielectric insulating film (140), and the third insulating film (150). [Selection] Figure 1C |