| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_58b1fe6e24bc6d4fb99f863b7f17fcfe |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02366
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042 |
| filingDate |
2007-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad27da6b2dcbba5064dc864418f767a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2db1b1c797f43e0d0a4c7115e1f1f568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a66c42a97fb8f80c5c20f0c95a14eef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_684a67ff32cd9f913be14704a64e9d7a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5c8c35d70a60a41e5866b8f424c8294 |
| publicationDate |
2008-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2008244414-A |
| titleOfInvention |
Semiconductor optical device |
| abstract |
The present invention provides a semiconductor optical device that eliminates the risk of crystal breakage due to stress of an electrode film and is excellent in reliability. In a semiconductor optical device that emits or receives light in a direction substantially perpendicular or parallel to an active surface formed on a semiconductor substrate, an electrode formed on the active surface side and connected to the active surface is stepped at an end thereof. This can be solved by a semiconductor optical device having a shape or a tapered shape. The electrode of the semiconductor optical device is formed of three layers of adhesion layer / diffusion prevention layer / Au, and the step shape or taper shape depends on the film thickness difference of the Au layer or the film thickness of the adhesion layer / diffusion prevention layer / Au. It is formed. [Selection] Figure 4 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014145973-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018049300-A |
| priorityDate |
2007-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |