http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008231570-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31077ac07729350a422dcf2ca1529323
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B9-00
filingDate 2008-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fd3be7836a891ab41d1a6d7b5d11e18
publicationDate 2008-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008231570-A
titleOfInvention Thin film and manufacturing method thereof
abstract 【Task】 Provided a method for efficiently controlling the composition ratio of SiN and SiON constituting the thin film in a method for producing a thin film having excellent gas barrier properties with transparency and gas barrier property by catalytic CVD, etc., and a thin film obtained by the method The purpose is to do. [Solution] In a thin film manufacturing method in which a plurality of types of raw material gases are reacted under reduced pressure, and a thin film made of the reaction product is formed on a substrate disposed in a reduced pressure system, a nitrogen-containing gas from a first raw material gas inlet, and Hydrogen is held in the system and supplied in the vicinity of the heated metal body, and a silane-based gas is introduced into the decompression system from the second raw material gas inlet, A thin film production characterized in that oxygen gas from a third source gas inlet is supplied to any one or more of a nearest part from one source gas inlet and both sides sandwiching the nearest part And a thin film obtained from the method. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013230605-A
priorityDate 2007-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 38.