http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008231560-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc45703f67bc72a6db582867886fd5d5 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06 |
| filingDate | 2007-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ae8a0a4aee0a58a556d157ef6550775 |
| publicationDate | 2008-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008231560-A |
| titleOfInvention | Film forming method and film forming member |
| abstract | Provided is a film forming method capable of serving as an intermediate layer that can ensure adhesion with a substrate and also ensure adhesion with an amorphous carbon film. The metal of the metal target is ionized by arc discharge, and a bias voltage is applied to the base material to attach the ionized metal to the surface of the base material to form a film made of the metal. A film including at least a step of forming a metal film, wherein the bias voltage at the start of the film formation is at least 500 V and the bias at the end of the film formation. The voltage is set to at least 100 V or less, and the metal film is formed while the magnitude of the bias voltage is gradually decreased from the start of film formation to the end of film formation. [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011089719-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105420670-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7360821-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101750171-B1 |
| priorityDate | 2007-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.