http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008229833-A

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filingDate 2007-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2008-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008229833-A
titleOfInvention Semiconductor device and manufacturing method thereof
abstract A semiconductor device in which a sealing cap is arranged on an element of a base substrate and a method for manufacturing the same, and a semiconductor device that can be manufactured in a small size and at low cost, can be face-down bonded, and has few restrictions on the mounting surface. An apparatus and a method for manufacturing the same are provided. A base substrate B1 having a plurality of insulated base semiconductor regions Bs formed in a surface layer portion, and a conductive cap substrate C1 bonded to the base substrate B1, the cap substrate It has a cap substrate in which a plurality of cap conductive regions Ce are formed by insulating isolation trenches 31 penetrating C1, and includes a predetermined region R1 in the base substrate B1 and a recess 32 in the cap substrate C1. The semiconductor device 100 is formed by sealing the spaces 23 and 32 and electrically connecting the predetermined cap conductive regions Ce1 and Ce2 to the predetermined base semiconductor regions Bs1 and Bs2. [Selection] Figure 1
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Total number of triples: 49.