| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01019
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01012
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-45144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-8592
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48465
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-45 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate |
2008-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b157d88743a75b76fb4d31e322781dd3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0459559e048d78c0cee19a9e9914e78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82c179d28d80741fd77d1f6b7c46ebc1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65f1180eab61f567ccc7282a4f22a3b6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_116fe4c64e3eb3a653c32d6f05b9e9ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_325e7ad8fa648c94de27d44998ad69e6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a93ea00e77166a1ed9820a679aaae2e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b163bf3e905959ba6cde340f7e19380
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00c372bc516cfa098d0fd555f4a8e9db |
| publicationDate |
2008-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2008227540-A |
| titleOfInvention |
Light emitting device |
| abstract |
A light-emitting element that can be reduced in size and that is easy to manufacture because of its simple structure and that can stably obtain a large light-emitting efficiency over a long period of time. A GaN substrate (1) has a plate-like crystal inversion region (51) extending continuously in a plane along the thickness direction and one direction in the surface of the GaN substrate (1). The plate-like crystal inversion region 51 and the plate-like crystal inversion region 51 propagated to the n-type and p-type nitride semiconductor layers 2 and 6 formed on the GaN substrate 1 are n-type from the p-type nitride semiconductor layer 6 side. The p-type nitride semiconductor layer 6 is removed to a position in the GaN substrate 1 through the nitride semiconductor layer 2 and in contact with the p-type nitride semiconductor layer 6 remaining after the removal. 12 is provided. [Selection] Figure 45 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015146069-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010087218-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013183149-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012059891-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8309381-B2 |
| priorityDate |
2003-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |