http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008227502-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ebca25e4f737729fb927875476e58a9f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44 |
| filingDate | 2008-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d6bf72ab9f5a70fafe349ed9634e689 |
| publicationDate | 2008-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008227502-A |
| titleOfInvention | Graded dielectric layer |
| abstract | PROBLEM TO BE SOLVED: To provide a graded dielectric layer. An optoelectronic device has a first refractive index that varies continuously or stepwise with depth, close to a semiconductor or conductor material, and a second refractive index adjacent to a surrounding material, such as an encapsulant. A passivation layer of dielectric material having a graded composition. The resulting graded dielectric layer reduces Fresnel loss by reducing the refractive index mismatch between the adjacent semiconductor or conductor layer and the surrounding medium. The method of forming the graded dielectric layer includes supplying a nitrogen-containing source gas to the deposition chamber at a decreasing flow rate or concentration while supplying an oxygen-containing source gas at an increasing flow rate or concentration. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016518029-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013051326-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2013051326-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011159801-A |
| priorityDate | 2007-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.