Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_39a9f66181ba753d515b2c2ef8e707da |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J37-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J27-24 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J23-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J37-342 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J35-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09C1-3669 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J21-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J37-0219 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J37-0226 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01C1-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J35-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J37-02 |
filingDate |
2007-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80a1a5ffdcc444eb579af3fbd94f86ba http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79c9295fae603ea604f902dfe7cf6b3b |
publicationDate |
2008-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2008221037-A |
titleOfInvention |
Nitrogen fixing material, method for producing the same, and nitrogen fixing method |
abstract |
A photocatalytically active inorganic oxide semiconductor and a conductive polymer contact composite material having significantly improved nitrogen fixation efficiency. Light irradiation is applied to a composite photocatalyst material in which an inorganic oxide semiconductor having a photocatalytic function and a conductive polymer that is soluble or dispersible in a solvent are contact-complexed, and nitrogen gas in the air is converted into an ammonium salt. And immobilized as ammonia. When the conductive polymer material is brought into contact with the photocatalytically active inorganic oxide semiconductor, a coating method is used in order to suppress a decrease in the number density of oxygen defect sites responsible for nitrogen fixation reaction. [Selection] Figure 1 |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012093632-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8986514-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9592495-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012055786-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014151291-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011027864-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012030144-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5936132-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014151290-A |
priorityDate |
2007-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |