http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008218996-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-933 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-54453 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-544 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2008-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1aac393039fbc3fb2571d0bbdbf903ae |
| publicationDate | 2008-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008218996-A |
| titleOfInvention | Method for fabricating a semiconductor optical device |
| abstract | A method of manufacturing a semiconductor optical device capable of good alignment when a pattern for a diffraction grating is drawn using an electron beam exposure apparatus. An insulator is formed on a part of a substrate main surface by etching. After forming the insulator 19, the stacked region 21 is formed on the main surface 11 a of the InP substrate 11. The III-V compound semiconductor layer 27 in the stacked region 21 is formed for the active layer of the semiconductor optical device. The diffraction grating is formed on the active layer. Since the height of the insulator 19 is equal to or greater than the thickness of the stacked region 21, the insulator 19 can be selectively removed from the stacked region 21 even after the stacked region 21 is formed. Even if the insulator 19 is removed, the semiconductor in the stacked region 21 is not etched. By removing the insulator 19, a step 33 that does not depend on the semiconductor crystal plane of the stacked region 21 is formed in the stacked region 21. After the stacked region 21 is formed, alignment for EB exposure is performed. [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011040687-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8824842-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9184558-B2 |
| priorityDate | 2007-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.