http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008216967-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J2367-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-162 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J5-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-38 |
filingDate | 2007-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1af7dd77e44a3851934d7250b1f76bc7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49af5196b78d3c177aa575a266ca2370 |
publicationDate | 2008-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2008216967-A |
titleOfInvention | Barrier film forming material and pattern forming method using the same |
abstract | An object of the present invention is to improve the solubility during development of a barrier film that prevents the influence of a liquid for immersion exposure used in immersion lithography on the resist film, so that a fine pattern having a good shape can be obtained. To do. A resist film is formed on a substrate, and a barrier film containing a compound that changes in molecular structure by an alkali solution and becomes alkali-insoluble to alkali-soluble is formed on the formed resist film. Form. Thereafter, with the immersion liquid 105 disposed on the barrier film 103, the resist film 102 is selectively irradiated with the exposure light 107 through the barrier film 103 to perform pattern exposure. After the pattern exposure, the barrier film 103 is removed, and the resist film 102 subjected to the pattern exposure is developed to obtain a resist pattern 102a from the resist film 102. [Selection] Figure 1 |
priorityDate | 2007-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.