| abstract |
PROBLEM TO BE SOLVED: To provide an underlayer film forming composition for lithography for forming an underlayer film used as a lower layer of a photoresist in a lithography process for manufacturing a semiconductor device. A resist underlayer film forming composition for use in a lithography process for manufacturing a semiconductor device, comprising a silicon-containing polymer (a) and a polynuclear phenol (b). The silicon-containing polymer (a) is polysiloxane (a1), polysilane (a2), polycarbosilane (a3), or a combination thereof. The polynuclear phenol (b) is a compound having 2 to 30 phenolic hydroxyl groups in the molecule. The polynuclear phenol (b) is a compound having 2 to 10 phenol groups in the molecule. [Selection figure] None |