http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008211260-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_58b1fe6e24bc6d4fb99f863b7f17fcfe |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-227 |
| filingDate | 2008-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e493ed25a23c21b00cb9e99d2470303 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba1ca9ba15c16f0426d04f18ff3b1ece http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e5bd68fbf5657bf7abf75bed37eea28 |
| publicationDate | 2008-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008211260-A |
| titleOfInvention | Semiconductor laser and manufacturing method thereof |
| abstract | In a conventional semiconductor laser that contains aluminum in a high concentration particularly in an active layer, end face deterioration due to laser driving operation is remarkably high, and high reliability is difficult. An oxygen-deficient aluminum oxide film is formed adjacent to a semiconductor on an end face of a resonator. [Effect] Since the end face deterioration can be suppressed by the present invention, it becomes possible to operate at a high temperature for a long time without causing end face deterioration, and a low-cost and highly reliable semiconductor laser can be manufactured. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2157787-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014093372-A |
| priorityDate | 2008-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.