| abstract |
The present invention provides a shower head that can improve the ionization rate of a gas for film formation and improve the film formation efficiency, and can be easily manufactured, and a CVD apparatus using the shower head. A shower head 40 is disposed in a processing chamber 10 so as to face a workpiece 20, and a gas for forming a nitride film on the surface of the workpiece from a gas inlet 12 provided on the back side of the shower head. Is applied to the shower head, a high frequency is applied between the shower head and the workpiece, plasma is generated, and a CVD apparatus for forming a film on the workpiece, the shower head comprising a shower plate 42 made of metal, A porous plate 44 disposed in contact with the shower plate on the back side thereof, and a plurality of gas diffusion holes 42a penetrating the plate portion in the thickness direction in the plate portion facing the workpiece of the shower plate. The porous plate is provided in a shape and arrangement that shields all the gas diffusion holes. [Selection] Figure 1 |