http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008203737-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F20-10 |
filingDate | 2007-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da70f0ee751771143f8486e137fe5bfa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e5186c14e9289ce8a7a738fe67dfba7 |
publicationDate | 2008-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2008203737-A |
titleOfInvention | Positive resist composition and resist pattern forming method |
abstract | Provided are a positive resist composition and a resist pattern forming method which are used for ArF excimer laser lithography and the like and are suitable for thermal flow. A positive resist composition comprising a resin component (A) whose solubility in an alkaline developer is increased by the action of an acid, and an acid generator component (B) that generates an acid upon exposure, The resin composition (A) has a hydroxynaphthalene (meth) acrylate structural unit (a0), and further contains a crosslinkable polyvinyl ether compound (G). [Selection figure] None |
priorityDate | 2007-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 284.