abstract |
Sputter etching by plasma is reduced, and plasma is stably generated in a processing chamber. A processing chamber for processing a substrate, a gas supply means for supplying a processing gas into the processing chamber, and a plasma provided in the processing chamber for exciting the processing gas supplied into the processing chamber by applying electric power. At least a pair of electrodes for generating gas, exhaust means for exhausting the atmosphere in the processing chamber, plasma detection means for detecting ignition of plasma in the processing chamber, and control means for controlling the gas supply means and the exhaust means The control means is configured such that the pressure in the processing chamber from when the application of electric power to the electrode is started until the plasma detection means detects the ignition of the plasma, the pressure after the plasma detection means detects the ignition of the plasma to the electrode. The gas supply means and the exhaust means are controlled so as to be higher than the pressure in the processing chamber until the application of the electric power is stopped. [Selection] Figure 6 |