| abstract |
The present invention provides a substrate processing method and a substrate processing apparatus capable of reducing processing time while suppressing occurrence of damage and poor drying. HFE is supplied to the surface of a wafer W that has been rinsed with DIW for a short time. As a result, most of the DIW on the wafer W is replaced with HFE. Thereafter, vapor of a mixed liquid of HFE and IPA is supplied to the surface of the wafer W. The supplied vapor is uniformly dissolved in the liquid component on the wafer W. The DIW remaining on the wafer W diffuses into the liquid component and then evaporates from the liquid surface of the liquid component. As a result, DIW is completely removed from the wafer W, and the occurrence of pattern collapse is suppressed. Thereafter, by performing a spin dry process, the wafer W can be dried while suppressing the generation of watermarks. [Selection] Figure 3 |