| abstract |
Provided is a technique capable of improving the quality of a semiconductor device formed by using a plasma CVD apparatus. After loading a wafer (S101 to S104), oxygen gas is supplied into the chamber (S105). Subsequently, a high frequency voltage is applied to the coil wound around the chamber to generate plasma gas from oxygen gas (S106). Then, measurement of the emission intensity of the plasma gas is started (S107). Next, silane gas is supplied into the chamber and an RF bias is applied to the wafer (S108). Thereafter, the film formation start time is specified from the increase in the emission intensity of silicon ions generated by converting the silane gas into plasma (S109). Similarly, the time when the RF bias is applied is specified from the increase in the emission intensity of oxygen ions (S110). Then, a difference between the film formation start time and the time when the RF bias is applied is detected (S111). [Selection] Figure 2 |