| abstract |
Disclosed is a semiconductor device that can prevent diffusion of Cu and can suppress an increase in dielectric constant between layers, and a method for manufacturing the same. A Cu wiring layer 6 is formed on a wafer W, and an amorphous carbon film 7 is formed on the Cu wiring layer 6 as a Cu diffusion barrier by CVD using a processing gas containing a hydrocarbon gas. Then, a low-k film 8 is formed. [Selection] Figure 1 |