http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008182154-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
filingDate | 2007-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e644380f4dd2f58b5f56aa9b10555a3b |
publicationDate | 2008-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2008182154-A |
titleOfInvention | Memory device |
abstract | A matrix type large capacity memory device using a resistance change type memory cell is provided. A memory element includes an intermediate electrode layer, a metal oxide layer, and an upper electrode on a semiconductor substrate, and an ohmic contact on a part of the semiconductor substrate. It is what I did. The metal oxide layer 103 is composed of bismuth (Bi), titanium (Ti), and oxygen, and is formed to have a thickness of 30 to 200 nm, for example, and is in contact with the intermediate electrode layer 102. For example, the metal oxide layer 103, Bi 4 Ti 3 O 12 in the stoichiometric base layer containing excess Ti as compared to the composition and stoichiometry of the Bi 4 Ti 3 O 12 dispersed therein Since the memory cell M has a rectifying characteristic, the sneak current to the non-selected memory cell can be suppressed. [Selection] Figure 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017193770-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8779848-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103187527-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9378811-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011025495-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101087440-B1 |
priorityDate | 2007-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.