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filingDate 2007-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2008-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008182154-A
titleOfInvention Memory device
abstract A matrix type large capacity memory device using a resistance change type memory cell is provided. A memory element includes an intermediate electrode layer, a metal oxide layer, and an upper electrode on a semiconductor substrate, and an ohmic contact on a part of the semiconductor substrate. It is what I did. The metal oxide layer 103 is composed of bismuth (Bi), titanium (Ti), and oxygen, and is formed to have a thickness of 30 to 200 nm, for example, and is in contact with the intermediate electrode layer 102. For example, the metal oxide layer 103, Bi 4 Ti 3 O 12 in the stoichiometric base layer containing excess Ti as compared to the composition and stoichiometry of the Bi 4 Ti 3 O 12 dispersed therein Since the memory cell M has a rectifying characteristic, the sneak current to the non-selected memory cell can be suppressed. [Selection] Figure 1
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