http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008177429-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
filingDate 2007-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_771460563e6afe1a68526f51a984833e
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publicationDate 2008-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008177429-A
titleOfInvention Light emitting device assembly
abstract The present invention is integrated with a light-emitting element (one chip), structurally does not require a regrowth process of a compound semiconductor layer, and is effective against destruction caused by forward and reverse overcurrent flow. A light emitting device assembly having protective means is provided. A light emitting device assembly includes a bypass diode formed on a substrate, a light emitting device formed thereon, and a reverse formed separately from the light emitting device above the substrate. A directional diode 40 is provided. [Selection] Figure 1
priorityDate 2007-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 22.