http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008172158-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-33 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-12 |
| filingDate | 2007-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c77863f18620702b050db9d786bdbcd8 |
| publicationDate | 2008-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008172158-A |
| titleOfInvention | Capacitor and manufacturing method thereof |
| abstract | Provided are a capacitor with a low leakage current, and an easy manufacturing method thereof, including a barrier layer that suppresses reduction of a dielectric inorganic oxide and does not impair dielectric properties. (A) a step of forming a lower electrode; (B) a step of forming a dielectric layer made of a ferroelectric or a piezoelectric material above the lower electrode; and (C) an upper portion of the dielectric layer. Forming an upper electrode on the substrate, (D) patterning the dielectric layer and the upper electrode, and (E) forming a first silicon oxide layer so as to cover at least a side surface of the dielectric layer. And (F) a step of performing treatment with plasma containing oxygen, and (G) a step of forming a second silicon oxide layer at least above the first silicon oxide layer. [Selection] Figure 4 |
| priorityDate | 2007-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.