| abstract |
When used in a resist composition, it has high sensitivity, high resolution, wide focal depth, high light transmittance, few defects during development, and resistance to dry etching that can withstand thinning of a resist film. A resist polymer is provided. A resist polymer comprising a structural unit A1 having a naphthalene skeleton to which an acid leaving group represented by formula (1-1) is bonded. Y is an acid leaving group. [Selection figure] None |