http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008157969-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7af673589ca45d2fd8b9ea902cdbd1dc |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01P15-125 |
| filingDate | 2008-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfd46c0e4bbe0b3c45a7c42ea18455ec |
| publicationDate | 2008-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008157969-A |
| titleOfInvention | Semiconductor dynamic quantity sensor and manufacturing method of semiconductor dynamic quantity sensor |
| abstract | To provide a semiconductor dynamic quantity sensor having a novel structure and electrically insulating a beam structure from a substrate, and a method for manufacturing the semiconductor dynamic quantity sensor. A first layer formed of a silicon material and a second layer disposed on an under surface side of the first layer via an insulating member, the first layer being in a horizontal direction according to a mechanical quantity A supporting beam fixed to the second layer via an insulating member, an insulating groove provided through the first layer to form the supporting beam, and an insulating groove The fixed electrode is provided on the side of the support beam, and is fixed to the second layer via an insulating member. The thickness of the movable electrode in the direction from the upper surface to the lower surface of the first layer is the thickness of the fixed electrode. Thinner than thickness. [Selection] Figure 34 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2579057-A |
| priorityDate | 2008-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.