| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2007-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd2a68cba73acc0cb2851f43206c0833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e65b070717012e3ce602cb8fbcdb0fb5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac403b38b142e2ce65d41a9ae257430b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c67bd492db8f16d4aa086df965a50a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66961cf1f8f78a1f1cb0587401e48b54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea2f4c8b008f38b35cae5d7f6c399222 |
| publicationDate |
2008-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2008147644-A |
| titleOfInvention |
Method for minimizing wet etch undercut and pore sealing ultra-low K (K <2.5) dielectrics |
| abstract |
PROBLEM TO BE SOLVED: To provide a method for processing a film on a substrate. In one aspect, the method includes after the photoresist is removed from the film by depositing a thin layer on the film that includes silicon and carbon, and may optionally include oxygen and / or nitrogen. Processing the patterned low dielectric constant film. The thin layer provides a carbon-rich hydrophobic surface to the patterned low dielectric constant film. The thin layer also protects the low dielectric constant film from subsequent wet cleaning processes and penetration by precursors of layers subsequently deposited on the low dielectric constant film. [Selection] Figure 1F |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111863610-A |
| priorityDate |
2006-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |