http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008143133-A

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Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-135
filingDate 2006-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4d4eeb56f0523d9f45170861b1a1cce
publicationDate 2008-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008143133-A
titleOfInvention Nozzle substrate manufacturing method, droplet discharge head manufacturing method, droplet discharge device manufacturing method, nozzle substrate, droplet discharge head, and droplet discharge device
abstract Disclosed is a method for manufacturing a nozzle substrate, which can improve the discharge performance by eliminating the axial deviation of the nozzle hole and maintaining the nozzle diameter with high accuracy. A step of half-etching an etching protection film to form a second opening a, and forming a first opening b that is coaxial with the second opening a and having a diameter smaller than that of the second opening a. A step of forming the cylindrical hole portion 110 by anisotropic dry etching from the first opening portion 42b, a step of expanding the diameter of the first opening portion 42b to form the third opening portion 42c, and an etching protective film Forming a hole protective film 420a by removing a part of 42, and forming a second nozzle hole whose diameter is expanded at a desired inclination angle by performing isotropic dry etching from the third opening 42c A step of removing the hole protective film 420a to form a first nozzle hole, and a step of thinning the silicon base material 41. [Selection] Figure 6
priorityDate 2006-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 17.