http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008143133-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-135 |
filingDate | 2006-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4d4eeb56f0523d9f45170861b1a1cce |
publicationDate | 2008-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2008143133-A |
titleOfInvention | Nozzle substrate manufacturing method, droplet discharge head manufacturing method, droplet discharge device manufacturing method, nozzle substrate, droplet discharge head, and droplet discharge device |
abstract | Disclosed is a method for manufacturing a nozzle substrate, which can improve the discharge performance by eliminating the axial deviation of the nozzle hole and maintaining the nozzle diameter with high accuracy. A step of half-etching an etching protection film to form a second opening a, and forming a first opening b that is coaxial with the second opening a and having a diameter smaller than that of the second opening a. A step of forming the cylindrical hole portion 110 by anisotropic dry etching from the first opening portion 42b, a step of expanding the diameter of the first opening portion 42b to form the third opening portion 42c, and an etching protective film Forming a hole protective film 420a by removing a part of 42, and forming a second nozzle hole whose diameter is expanded at a desired inclination angle by performing isotropic dry etching from the third opening 42c A step of removing the hole protective film 420a to form a first nozzle hole, and a step of thinning the silicon base material 41. [Selection] Figure 6 |
priorityDate | 2006-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.