| abstract |
A high-k silicate atomic layer deposition method is provided. To obtain a hafnium silicate layer, the substrate is exposed to pulsations of a hafnium precursor, an oxidant pulsation, a silicon precursor pulsation, and another oxidant pulsation. Additionally, the catalyst may be co-flowed into the chamber through a separate inlet with one or more reactive species. In a variation, the catalyst may be flowed into the chamber prior to introducing the reactive species into the dipping procedure. Hafnium silicate formation can proceed at high speed and / or low temperature by co-flowing the catalyst through separate inlets or by performing catalyst soaking. [Selection] Figure 2 |