http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008141187-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-021 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2201 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32341 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
filingDate | 2007-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77138c9e77cc07f73070b86ed1a39105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a11f603fdc703d99c4069f0826b953b |
publicationDate | 2008-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2008141187-A |
titleOfInvention | Nitride semiconductor laser device |
abstract | Even if a silicon epitaxial substrate made of silicon is used for a semiconductor laser structure made of a nitride semiconductor, the reflectance of an end mirror can be made sufficiently large to realize a low threshold current and a low operating current. To. A nitride semiconductor laser device is formed on a substrate 101 made of silicon whose principal surface has a {100} plane orientation, each of which is made of a group III-V nitride, And a semiconductor stacked body 120 including a plurality of semiconductor layers including the multiple quantum well active layer 107. The semiconductor stacked body 120 has a plane parallel to the {011} plane, which is the plane orientation of silicon, on the cleavage plane 113, and the cleavage plane 113 constitutes an end face mirror. [Selection] Figure 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012105179-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012164717-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013084719-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9099383-B2 |
priorityDate | 2006-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.