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publicationDate 2008-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008141187-A
titleOfInvention Nitride semiconductor laser device
abstract Even if a silicon epitaxial substrate made of silicon is used for a semiconductor laser structure made of a nitride semiconductor, the reflectance of an end mirror can be made sufficiently large to realize a low threshold current and a low operating current. To. A nitride semiconductor laser device is formed on a substrate 101 made of silicon whose principal surface has a {100} plane orientation, each of which is made of a group III-V nitride, And a semiconductor stacked body 120 including a plurality of semiconductor layers including the multiple quantum well active layer 107. The semiconductor stacked body 120 has a plane parallel to the {011} plane, which is the plane orientation of silicon, on the cleavage plane 113, and the cleavage plane 113 constitutes an end face mirror. [Selection] Figure 1
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