| abstract |
PROBLEM TO BE SOLVED: To prevent a resist residue from being generated when a columnar electrode forming plating resist film is peeled in a manufacturing method of a semiconductor device called a CSP provided with a columnar electrode. An overcoat film 9 made of polyimide resin or the like having an opening 10 in a portion corresponding to a connection pad portion of the wiring 8 is formed on the upper surface of a protective film 5 including the wiring 8. Next, a plating resist film 25 having the base metal layer 11 and the opening 26 is formed. Next, by performing electrolytic plating of copper using the base metal layer 11 as a plating current path, the lower columnar electrode 12a and the upper columnar electrode unit 12b are formed on the connection pad portion of the wiring 8 in the opening 10 of the overcoat film 9. A columnar electrode is formed. In this case, there is no room for the plating resist film 25 to enter between the wirings 8, and as a result, it is possible to make it difficult for a resist residue to be generated when the plating resist film 25 is peeled off. [Selection] Figure 6 |