| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b051f9f7933c758e66f6ceda5c9fb2cc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3121
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2007-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f76a585eefed281cd9299aa2bea8d4e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20d5ccf261affd04e9bb9b2b7d1ad679
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a1a62fffe6926a274f503bda1f17ec4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8180178a7a6e1e4ad5dbe3f8077df175 |
| publicationDate |
2008-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2008135755-A |
| titleOfInvention |
Organosilane compounds for modifying the dielectric properties of silicon oxide and silicon nitride films |
| abstract |
The present invention discloses a method for depositing a carbon-containing silicon oxide film or a carbon-containing silicon nitride film having enhanced etch resistance. The method includes using a precursor containing silicon, a precursor containing carbon and a chemical modifier. The present invention also discloses a method of depositing a silicon oxide film or silicon nitride film having enhanced etch resistance comprising using an organosilane precursor and a chemical modifier. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016027674-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012513117-A |
| priorityDate |
2006-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |