| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd221d21998567268ab28734915df324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_981a50a0cf7bf2fadf3501c977fca016 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-076
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-066 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-08 |
| filingDate |
2006-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d539f0749b6e8a385831aff11b4bed0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0de07aef9456c9d5a6c3bdd3e669837
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1d9b4e1c86ffaa6d6339804bee52d3e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26249054b5273b581825e09093eea9f1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ea74d5842421b4fa4c9935cfb4e136f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9934e1f6bf1e49b9fb1fa659aca0d468 |
| publicationDate |
2008-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2008133145-A |
| titleOfInvention |
Thin film manufacturing method and hexagonal piezoelectric thin film manufactured by the thin film manufacturing method |
| abstract |
Provided is a thin film manufacturing method capable of forming a crystal thin film having a hexagonal crystal structure by aligning the crystal thin film in the c-axis plane. A rectangular magnetron circuit is disposed on the lower surface of a rectangular target. One half of the target 22 is covered with a shielding plate 51, and the sputtered particles that have jumped out from the erosion region 39 (region with the highest magnetic flux density) thereunder are blocked from flying to the substrate 28. The substrate 28 is disposed at a height located inside the plasma region in the vacuum chamber 21, and sputtered particles that have jumped out from the region exposed from the shielding plate 51 in the erosion region 39 are incident on the surface of the substrate 28. If the gas pressure is reduced in this way, the mean free path of sputtered particles becomes longer and a large amount of sputtered particles with high energy is incident, resulting in a crystal surface that is not easily damaged by the incidence of sputtered particles with high energy (11-20). ) Crystal grains having a plane are preferentially grown to form a c-axis in-plane alignment film. [Selection] Figure 9 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020088281-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7115257-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I617685-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018029186-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011157584-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014002916-A1 |
| priorityDate |
2006-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |