http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008130852-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2006-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5223e91e87760afbb76e6a00400dd0c1 |
| publicationDate | 2008-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008130852-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | A simpler method for manufacturing a fully depleted SOI gate all-around MOSFET is provided. A method of manufacturing a semiconductor device according to the present invention includes: a crystallization start point forming step of forming a plurality of crystallization start point portions regularly arranged on an insulating substrate; A first film forming step for forming a single crystal semiconductor layer, and a non-single crystal semiconductor layer is melt-crystallized in a range including a plurality of crystallization start point portions, and semiconductor crystal grains are grown for each crystallization start point portion. A melt crystallization step of forming a crystalline semiconductor layer having a protruding portion raised by expansion collision between the semiconductor crystal grains, a gate insulating layer forming step of forming an insulating layer on the crystalline semiconductor layer, and the crystalline semiconductor layer Forming a gate electrode layer through an insulating layer on the protruding portion of the substrate, and forming source / drain regions for forming first and second conductive layers on the top and base of the protruding portion of the crystalline semiconductor layer, respectively And a process. [Selection] Figure 4 |
| priorityDate | 2006-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419544408 |
Total number of triples: 13.