http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008124119-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
filingDate | 2006-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59d212ee50c2a83bc5237f44815ab6e4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_606582e46e7dcf4a13b632a942b346a7 |
publicationDate | 2008-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2008124119-A |
titleOfInvention | Semiconductor laser and manufacturing method thereof |
abstract | The present invention provides a semiconductor laser and a method of manufacturing the same, in which the dependence of the divergence angle on the light output is further reduced, and both accurate data reading and writing are possible. A semiconductor laser is divided into an electrode for current injection that contributes to laser oscillation and two electrodes for refractive index control that adjust the spread angle, and each is constituted by an independent circuit. At the time of laser low-power oscillation, a bias is applied to the two refractive index control electrodes 112 to transmit the heat generated by the resistor layer 110 to the ridge portion near the laser light emitting end face. As a result, the light divergence angle can be brought close to the time of laser high-power oscillation, the difference in divergence of the divergence angle between low output and high output can be suppressed, the power dependence of the divergence angle can be suppressed, and both data can be read and written accurately. [Selection] Figure 2 |
priorityDate | 2006-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.